FDA032N08

Виробник: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube

Виробник: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube

Виробник: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube

Виробник: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube

Виробник: ON Semiconductor
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube

Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Case: TO3PN
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 0.22µC
On-state resistance: 3.2mΩ
Power dissipation: 37.5W
Drain current: 120A
Gate-source voltage: ±20V
Pulsed drain current: 940A
Drain-source voltage: 70V
Kind of channel: enhancement

Виробник: onsemi
Description: MOSFET N-CH 75V 120A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V

Виробник: onsemi
MOSFETs PT3 75V 3.2mohm