на замовлення 6400 шт:
термін постачання 683-692 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 412.03 грн |
| 10+ | 351.63 грн |
| 25+ | 297.09 грн |
| 100+ | 249.02 грн |
| 250+ | 241.68 грн |
| 500+ | 182.93 грн |
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Технічний опис FDB0190N807L onsemi / Fairchild
Description: MOSFET N-CH 80V 270A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V, Power Dissipation (Max): 3.8W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V.
Інші пропозиції FDB0190N807L
| Фото | Назва | Виробник | Інформація |
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FDB0190N807L | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 80V 270A 7-Pin(6+Tab) D2PAK T/R |
товар відсутній |
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FDB0190N807L | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 190A Pulsed drain current: 1.44kA Power dissipation: 250W Case: D2PAK-6 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 249nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDB0190N807L | Виробник : onsemi |
Description: MOSFET N-CH 80V 270A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V |
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FDB0190N807L | Виробник : onsemi |
Description: MOSFET N-CH 80V 270A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19110 pF @ 40 V |
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FDB0190N807L | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 190A Pulsed drain current: 1.44kA Power dissipation: 250W Case: D2PAK-6 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 249nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |