FDB035AN06A0_F085 Fairchild Semiconductor

Description: MOSFET N-CH 60V 22A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 310W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).