FDB045AN08A0-F085 ON Semiconductor

Description: MOSFET N-CH 75V 19A TO263AB, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Last Time Buy, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 310W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).