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FDB12N50FTM-WS

FDB12N50FTM-WS onsemi / Fairchild

FDB12N50F_D-2312023.pdf
Виробник: onsemi / Fairchild
MOSFET 500V 11.5A 0.7Ohm N-Channel
на замовлення 210 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна без ПДВ
3+157.86 грн
10+140.52 грн
25+118.05 грн
100+98.72 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
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Технічний опис FDB12N50FTM-WS onsemi / Fairchild

Description: MOSFET N-CH 500V 11.5A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 165W (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Інші пропозиції FDB12N50FTM-WS

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
FDB12N50FTM-WS FDB12N50FTM-WS onsemi fdb12n50f-d.pdf Description: MOSFET N-CH 500V 11.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FDB12N50FTM-WS FDB12N50FTM-WS onsemi fdb12n50f-d.pdf Description: MOSFET N-CH 500V 11.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FDB12N50FTM-WS FDB12N50FTM-WS ONSEMI fdb12n50f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
FDB12N50FTM-WS fdb12n50f-d.pdf
FDB12N50FTM-WS
Виробник: onsemi
Description: MOSFET N-CH 500V 11.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
FDB12N50FTM-WS fdb12n50f-d.pdf
FDB12N50FTM-WS
Виробник: onsemi
Description: MOSFET N-CH 500V 11.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FDB12N50FTM-WS fdb12n50f-d.pdf
FDB12N50FTM-WS
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.