Інші пропозиції FDB15N50
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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FDB15N50 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK T/R |
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FDB15N50 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDB15N50 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK T/R |
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FDB15N50 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 500V 15A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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FDB15N50 | Виробник : onsemi |
Description: MOSFET N-CH 500V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
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FDB15N50 | Виробник : onsemi |
Description: MOSFET N-CH 500V 15A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
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FDB15N50 | Виробник : onsemi / Fairchild |
MOSFET 15A 500V 0.38 Ohm N-Ch SMPS Pwr |
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FDB15N50 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.33Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |