FDB4030L Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AB, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 37.5W (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 175°C (TJ), Mounting Type: Surface Mount.