FDB42AN15A0-F085 ON Semiconductor / Fairchild
Виробник: ON Semiconductor / Fairchild
MOSFET TO263_03, SINGLE, N-CH, 150V, 42MOHM ULTRAFET TRENCH MOSFET
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Технічний опис FDB42AN15A0-F085 ON Semiconductor / Fairchild
Description: MOSFET N-CH 150V 35A D2PAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції FDB42AN15A0-F085
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDB42AN15A0-F085 | Виробник : onsemi |
Description: MOSFET N-CH 150V 35A D2PAK Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
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