FDB8860-F085 Fairchild Semiconductor

Description: FDB8860 - N-CHANNEL LOGIC LEVEL, Input Capacitance (Ciss) (Max) @ Vds: 12585 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 254W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk.