FDC021N30

FDC021N30 ON Semiconductor / Fairchild


FDC021N30-D-1806371.pdf Виробник: ON Semiconductor / Fairchild
MOSFET 30V/20V NChnl Power Trench MOSFET
на замовлення 5787 шт:

термін постачання 21-30 дні (днів)
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Технічний опис FDC021N30 ON Semiconductor / Fairchild

Description: MOSFET N-CH 30V 6.1A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 15 V.

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FDC021N30 FDC021N30 Виробник : onsemi fdc021n30-d.pdf Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 15 V
товар відсутній
FDC021N30 FDC021N30 Виробник : onsemi fdc021n30-d.pdf Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 15 V
товар відсутній