FDC2512-P onsemi


Виробник: onsemi
Description: MOSFET N-CH 150V SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
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Технічний опис FDC2512-P onsemi

Description: MOSFET N-CH 150V SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SuperSOT™-6, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V.

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FDC2512-P Виробник : onsemi onsemi
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