FDC5661N onsemi
Виробник: onsemi
Description: FET 60V 50.0 MOHM SSOT6
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSOT-23-6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 14+ | 22.94 грн |
| 20+ | 15.31 грн |
| 25+ | 13.56 грн |
| 100+ | 10.98 грн |
| 250+ | 10.14 грн |
| 500+ | 9.64 грн |
| 1000+ | 9.07 грн |
Відгуки про товар
Написати відгук
Технічний опис FDC5661N onsemi
Description: FET 60V 50.0 MOHM SSOT6, Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TSOT-23-6, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).