FDC6301N onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
| Кількість | Ціна |
|---|---|
| 3000+ | 7.82 грн |
| 6000+ | 7.34 грн |
| 9000+ | 7.11 грн |
| 15000+ | 6.49 грн |
| 21000+ | 6.38 грн |
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Технічний опис FDC6301N onsemi
Description: MOSFET 2N-CH 25V 0.22A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 220mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active.
Інші пропозиції FDC6301N за ціною від 7.03 грн до 41.47 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FDC6301N | onsemi |
Description: MOSFET 2N-CH 25V 0.22A SSOT6 Part Status: Active Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Current - Continuous Drain (Id) @ 25°C: 220mA Drain to Source Voltage (Vdss): 25V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 25499 шт: термін постачання 21-31 дні (днів) |
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FDC6301N | onsemi |
MOSFETs SSOT-6 N-CH 25V |
на замовлення 8149 шт: термін постачання 21-30 дні (днів) |
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| FDC6301N |
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Виробник: onsemi
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Part Status: Active
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 25499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 39.52 грн |
| 13+ | 23.58 грн |
| 100+ | 15.02 грн |
| 500+ | 10.65 грн |
| 1000+ | 9.53 грн |