FDC642P-F085P ON Semiconductor

Description: MOSFET P-CH 20V 4A TSOT23-6, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: TSOT-23-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).