FDD3680 onsemi / Fairchild

Description: MOSFET N-CH 100V 25A TO252, Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 68W (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).