FDD3706 Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 500+ | 43.42 грн |
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Технічний опис FDD3706 Fairchild Semiconductor
Description: MOSFET N-CH 20V 14.7A/50A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 44W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції FDD3706 за ціною від 60.35 грн до 60.35 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
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FDD3706 | Виробник : ON-Semiconductor |
N-Channel 20V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount D-PAK (TO-) FDD3706 ON Semiconductor TFDD3706 кількість в упаковці: 5 шт |
на замовлення 8 шт: термін постачання 28-31 дні (днів) |
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FDD3706 | Виробник : ON Semiconductor / Fairchild |
MOSFET 20V N-Ch PowerTrench |
на замовлення 3513 шт: термін постачання 21-30 дні (днів) |
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FDD3706 | Виробник : onsemi |
Description: MOSFET N-CH 20V 14.7A/50A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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FDD3706 | Виробник : onsemi |
Description: MOSFET N-CH 20V 14.7A/50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V Power Dissipation (Max): 3.8W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V |
товару немає в наявності |