FDD5810-F085 ON Semiconductor

Description: MOSFET N-CH 60V 7.4A/37A DPAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Grade: Automotive, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 72W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).