FDD6612A Fairchild Semiconductor

Description: MOSFET N-CH 30V 9.5A/30A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).