FDD6670AL Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 30V 84A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 188+ | 107.38 грн |
Відгуки про товар
Написати відгук
Технічний опис FDD6670AL Fairchild Semiconductor
Description: MOSFET N-CH 30V 84A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 83W (Ta), Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.
Інші пропозиції FDD6670AL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| FDD6670AL | Виробник : FSC |
09+ |
на замовлення 32208 шт: термін постачання 14-28 дні (днів) |
||
|
FDD6670AL | Виробник : onsemi |
Description: MOSFET N-CH 30V 84A D-PAKVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 83W (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3845 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V Drain to Source Voltage (Vdss): 30 V |
товару немає в наявності |
