FDD6680A Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 30V 14A/56A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 197+ | 114.19 грн |
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Технічний опис FDD6680A Fairchild Semiconductor
Description: MOSFET N-CH 30V 14A/56A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції FDD6680A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| FDD6680A | Виробник : FAIRCHILD |
TO-252 |
на замовлення 21000 шт: термін постачання 14-28 дні (днів) |
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FDD6680A | Виробник : onsemi |
Description: MOSFET N-CH 30V 14A/56A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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FDD6680A | Виробник : onsemi / Fairchild |
MOSFET 30V N-Ch PowerTrench |
товару немає в наявності |