FDD6680S Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252, (D-Pak), Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.