Технічний опис FDD8444L-F085 onsemi / Fairchild
Description: MOSFET N-CH 40V 16A/50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V, Power Dissipation (Max): 153W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції FDD8444L-F085
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FDD8444L-F085 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 40V 16A Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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FDD8444L-F085 | Виробник : onsemi |
Description: MOSFET N-CH 40V 16A/50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Power Dissipation (Max): 153W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |