FDD8870-F085 ON Semiconductor

Description: MOSFET N-CH 30V 21A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V.