| Кількість | Ціна |
|---|---|
| 3+ | 145.55 грн |
| 10+ | 121.83 грн |
| 100+ | 85.03 грн |
| 500+ | 74.58 грн |
| 1000+ | 68.16 грн |
| 2500+ | 57.64 грн |
| 25000+ | 51.79 грн |
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Технічний опис FDD9409L-F085 onsemi / Fairchild
Description: MOSFET N-CH 40V 90A TO252, Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 150W (Tj), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Qualification: AEC-Q101.
Інші пропозиції FDD9409L-F085
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FDD9409L-F085 | Виробник : ON Semiconductor |
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на замовлення 9927 шт: термін постачання 14-28 дні (днів) |
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FDD9409L-F085 | Виробник : onsemi |
Description: MOSFET N-CH 40V 90A TO252 Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 150W (Tj) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 |
товару немає в наявності |
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FDD9409L-F085 | Виробник : onsemi |
Description: MOSFET N-CH 40V 90A TO252 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 150W (Tj) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |