FDFMA2P029Z ON Semiconductor / Fairchild

Description: MOSFET P-CH 20V 3.1A 6MICROFET, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 6-MicroFET (2x2), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.4W (Tj), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V.