FDFMA2P853T Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET P-CH 20V 3A MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 1110+ | 20.30 грн |
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Технічний опис FDFMA2P853T Fairchild Semiconductor
Description: MOSFET P-CH 20V 3A MICROFET, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 7-SOIC, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 1.4W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads, Packaging: Tape & Reel (TR).
Інші пропозиції FDFMA2P853T за ціною від 26.68 грн до 61.78 грн
| Фото | Назва | Виробник | Інформація |
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FDFMA2P853T | Виробник : onsemi / Fairchild |
MOSFET MOSFET/Schottky -20V Int. PCh PowerTrenc |
на замовлення 1654 шт: термін постачання 21-30 дні (днів) |
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FDFMA2P853T | Виробник : onsemi |
Description: MOSFET P-CH 20V 3A MICROFET Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 7-SOIC Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 1.4W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |