FDFMA3N109 ON Semiconductor

Description: MOSFET N-CH 30V 2.9A 6MICROFET, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 6-MicroFET (2x2), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.5W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-VDFN Exposed Pad, Packaging: Tape & Reel (TR).