FDFMA3P029Z Fairchild Semiconductor

Description: MOSFET P-CH 30V 3.3A 6MICROFET, Packaging: Bulk, Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 87mOhm @ 3.3A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-MLP (2x2), Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V.