FDG332PZ onsemi
Виробник: onsemiDescription: MOSFET P-CH 20V 2.6A SC88
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
на замовлення 2618 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1665+ | 11.97 грн |
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Технічний опис FDG332PZ onsemi
Description: MOSFET P-CH 20V 2.6A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 2.6A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-88 (SC-70-6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V.
Інші пропозиції FDG332PZ
| Фото | Назва | Виробник | Інформація |
Доступність |
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FDG332PZ | Виробник : onsemi |
Description: MOSFET P-CH 20V 2.6A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.6A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V |
товар відсутній |
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FDG332PZ | Виробник : onsemi |
Description: MOSFET P-CH 20V 2.6A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.6A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V |
товар відсутній |
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FDG332PZ | Виробник : onsemi / Fairchild |
MOSFET -20V P-Channel PowerTrench |
товар відсутній |