FDG361N Fairchild Semiconductor

Description: MOSFET N-CH 100V 600MA SC88, Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: SC-88 (SC-70-6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 420mW (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 600mA, 10V, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Bulk.