Інші пропозиції FDH5500 за ціною від 125.44 грн до 125.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
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FDH5500 | Fairchild Semiconductor |
 Description: MOSFET N-CH 55V 75A TO247-3Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20 Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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| FDH5500 |
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Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 55V 75A TO247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20
Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 55V 75A TO247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20
Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 177+ | 125.44 грн |