FDMA1025P Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 3, Packaging: Bulk, Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.1A, Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V, Rds On (Max) @ Id, Vgs: 155mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-MicroFET (2x2), Part Status: Active.