FDMA1032CZ ONSEMI
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.7/-3.1A
Power dissipation: 1.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 68/95mΩ
Mounting: SMD
Gate charge: 4/7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
| Кількість | Ціна |
|---|---|
| 9+ | 52.87 грн |
| 11+ | 41.65 грн |
| 12+ | 37.08 грн |
| 50+ | 27.26 грн |
| 100+ | 24.04 грн |
| 500+ | 18.79 грн |
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Технічний опис FDMA1032CZ ONSEMI
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A, Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V, Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-MicroFET (2x2).
Інші пропозиції FDMA1032CZ за ціною від 13.22 грн до 68.43 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDMA1032CZ | onsemi |
Description: MOSFET N/P-CH 20V 3.7A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) |
на замовлення 2686 шт: термін постачання 21-31 дні (днів) |
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FDMA1032CZ | onsemi / Fairchild |
MOSFETs 20V Complementary PowerTrench MOSFET |
на замовлення 6856 шт: термін постачання 21-30 дні (днів) |
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FDMA1032CZ | onsemi |
Description: MOSFET N/P-CH 20V 3.7A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | ||||||||||||||
| FDMA1032CZ |
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на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| FDMA1032CZ |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
на замовлення 2686 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.67 грн |
| 10+ | 39.77 грн |
| 100+ | 25.93 грн |
| 500+ | 18.73 грн |
| 1000+ | 16.92 грн |
| FDMA1032CZ |
![]() |
Виробник: onsemi / Fairchild
MOSFETs 20V Complementary PowerTrench MOSFET
MOSFETs 20V Complementary PowerTrench MOSFET
на замовлення 6856 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 68.43 грн |
| 10+ | 42.22 грн |
| 100+ | 23.63 грн |
| 500+ | 18.43 грн |
| 1000+ | 16.32 грн |
| 3000+ | 14.07 грн |
| 6000+ | 13.22 грн |
| FDMA1032CZ |
![]() |
Виробник: onsemi
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)



