FDMC007N08LC onsemi
Виробник: onsemiDescription: MOSFET N-CHANNEL 80V 66A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 120µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 64.77 грн |
| 6000+ | 60.02 грн |
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Технічний опис FDMC007N08LC onsemi
Description: MOSFET N-CHANNEL 80V 66A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 21A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 120µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції FDMC007N08LC за ціною від 60.85 грн до 158.09 грн
| Фото | Назва | Виробник | Інформація |
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FDMC007N08LC | Виробник : onsemi |
Description: MOSFET N-CHANNEL 80V 66A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 21A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 120µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 8448 шт: термін постачання 21-31 дні (днів) |
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FDMC007N08LC | Виробник : onsemi / Fairchild |
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на замовлення 15492 шт: термін постачання 21-30 дні (днів) |
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FDMC007N08LC | Виробник : ON Semiconductor |
Trans MOSFET N-CH 80V 14A 8-Pin PQFN EP T/R |
товар відсутній |
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| FDMC007N08LC | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 330A Power dissipation: 57W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| FDMC007N08LC | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 330A Power dissipation: 57W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |