FDMC010N08C onsemi
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/51A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Power Dissipation (Max): 2.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V
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Технічний опис FDMC010N08C onsemi
Description: MOSFET N-CH 80V 11A/51A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V, Power Dissipation (Max): 2.4W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V.
Інші пропозиції FDMC010N08C за ціною від 95.77 грн до 300.52 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FDMC010N08C | onsemi |
Description: MOSFET N-CH 80V 11A/51A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 4V @ 90µA Power Dissipation (Max): 2.4W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
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| FDMC010N08C | ON Semiconductor |
|
на замовлення 2705 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||||||
| FDMC010N08C | ONSEMI |
Description: ONSEMI - FDMC010N08C - FET 80V 10.0 MOHM IN 3X3CLIP/ REEL 65AC4694 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 usEccn: EAR99 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. |
| FDMC010N08C |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/51A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 2.4W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 11A/51A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 2.4W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 300.52 грн |
| 10+ | 190.20 грн |
| 100+ | 133.83 грн |
| 500+ | 103.02 грн |
| 1000+ | 95.77 грн |
| FDMC010N08C |
|
Виробник: ON Semiconductor
на замовлення 2705 шт:
термін постачання 14-28 дні (днів)
| FDMC010N08C |
|
Виробник: ONSEMI
Description: ONSEMI - FDMC010N08C - FET 80V 10.0 MOHM IN 3X3CLIP/ REEL 65AC4694
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Description: ONSEMI - FDMC010N08C - FET 80V 10.0 MOHM IN 3X3CLIP/ REEL 65AC4694
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
на замовлення 2 шт:
термін постачання 21-31 дні (днів)