FDMC0202S Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PQFN (3.3x3.3), Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 2.3W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 3.15mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.