FDMC15N06 ONSEMI
Виробник: ONSEMIDescription: ONSEMI - FDMC15N06 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 1217 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 459+ | 87.27 грн |
Відгуки про товар
Написати відгук
Технічний опис FDMC15N06 ONSEMI
Description: MOSFET N-CH 55V 2.4A/15A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 15A, 10V, Power Dissipation (Max): 2.3W (Ta), 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Інші пропозиції FDMC15N06 за ціною від 93.94 грн до 150.70 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMC15N06 | Виробник : onsemi / Fairchild |
MOSFET UltraFET 55V, 15A |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| FDMC15N06 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33 Mounting: SMD Case: Power33 Drain-source voltage: 55V Drain current: 9A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||
 |
FDMC15N06 | Виробник : onsemi |
Description: MOSFET N-CH 55V 2.4A/15A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 15A, 10V Power Dissipation (Max): 2.3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товару немає в наявності |
|||||||||||
|
|
FDMC15N06 | Виробник : onsemi |
Description: MOSFET N-CH 55V 2.4A/15A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 15A, 10V Power Dissipation (Max): 2.3W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
товару немає в наявності |
|||||||||||
| FDMC15N06 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33 Mounting: SMD Case: Power33 Drain-source voltage: 55V Drain current: 9A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A |
товару немає в наявності |