Технічний опис FDMC2514SDC ON Semiconductor / Fairchild
Description: MOSFET N-CH 25V 24A/40A DLCOOL33, Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: Dual Cool ™ 33, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 3W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції FDMC2514SDC
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDMC2514SDC | Виробник : onsemi |
Description: MOSFET N-CH 25V 24A/40A DLCOOL33Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Dual Cool ™ 33 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 3W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
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FDMC2514SDC | Виробник : onsemi |
Description: MOSFET N-CH 25V 24A/40A DLCOOL33Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V Power Dissipation (Max): 3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: Dual Cool ™ 33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V |
товару немає в наявності |



