FDMC6686P onsemi
Виробник: onsemi
Description: MOSFET P-CH 20V 18A/56A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 2+ | 186.71 грн |
| 10+ | 116.11 грн |
| 100+ | 79.62 грн |
| 500+ | 60.04 грн |
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Технічний опис FDMC6686P onsemi
Description: MOSFET P-CH 20V 18A/56A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V, Power Dissipation (Max): 2.3W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V.
Інші пропозиції FDMC6686P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FDMC6686P | Виробник : ON Semiconductor / Fairchild |
MOSFET PT8P 20/8V ER PQFN33 |
на замовлення 10729 шт: термін постачання 21-30 дні (днів) |