FDMC6688P ON Semiconductor

Description: MOSFET P-CH 20V 14A/56A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 8-PQFN (3.3x3.3), Power33, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).