FDMC6890NZ Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 4, Packaging: Bulk, Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.92W, 1.78W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: MicroFET 3x3mm, Part Status: Active.