FDMC6890NZ Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 4, Packaging: Bulk, Part Status: Active, Supplier Device Package: MicroFET 3x3mm, Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 68mOhm @ 4A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.92W, 1.78W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad.