.JPG "FDMC7200S")
FDMC7200S onsemi
Виробник: onsemiDescription: MOSFET 2N-CH 30V 7A/13A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 60.73 грн |
| 10+ | 50.85 грн |
| 100+ | 35.17 грн |
| 500+ | 27.58 грн |
| 1000+ | 23.47 грн |
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Технічний опис FDMC7200S onsemi
Description: MOSFET 2N-CH 30V 7A/13A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A, 13A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Інші пропозиції FDMC7200S за ціною від 20.34 грн до 65.96 грн
| Фото | Назва | Виробник | Інформація |
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FDMC7200S | Виробник : onsemi / Fairchild |
MOSFET DUAL N-CH. ER TRENCH MO |
на замовлення 2852 шт: термін постачання 21-30 дні (днів) |
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FDMC7200S | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 7A/13A 8-Pin WDFN EP T/R |
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FDMC7200S | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 7A/13A 8-Pin WDFN EP T/R |
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| FDMC7200S | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18/13A Pulsed drain current: 40...27A Power dissipation: 1.9/2.9W Case: Power33 Gate-source voltage: ±20V On-state resistance: 30/13.1mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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FDMC7200S | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 7A/13A 8PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 13A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
товар відсутній |
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| FDMC7200S | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18/13A Pulsed drain current: 40...27A Power dissipation: 1.9/2.9W Case: Power33 Gate-source voltage: ±20V On-state resistance: 30/13.1mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |