FDMC7572S onsemi

Description: POWER FIELD-EFFECT TRANSISTOR, 2, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 3.15mOhm @ 22.5A, 10V, Power Dissipation (Max): 2.3W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V.