FDMC7660S onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 20A/40A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 3+ | 136.38 грн |
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Технічний опис FDMC7660S onsemi
Description: MOSFET N-CH 30V 20A/40A POWER33, Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: Power33, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції FDMC7660S за ціною від 36.23 грн до 150.38 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
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FDMC7660S | Виробник : onsemi |
MOSFETs 30V N-Chan SyncFET PowerTrench |
на замовлення 5647 шт: термін постачання 21-30 дні (днів) |
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| FDMC7660S | Виробник : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 4 Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
на замовлення 9685 шт: термін постачання 21-31 дні (днів) |
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| FDMC7660S |
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на замовлення 1080 шт: термін постачання 14-28 дні (днів) |
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FDMC7660S | Виробник : onsemi |
Description: MOSFET N-CH 30V 20A/40A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
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| FDMC7660S | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33 Mounting: SMD Case: Power33 Gate charge: 66nC On-state resistance: 3.1mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 40A Power dissipation: 41W Pulsed drain current: 200A Type of transistor: N-MOSFET Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar |
товару немає в наявності |