FDMC8026S ON Semiconductor / Fairchild

Description: MOSFET N-CH 30V 19A/21A 8MLP, Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-MLP (3.3x3.3), Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 2.4W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 21A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).