FDMC86102 onsemi

Description: MOSFET N-CH 100V 7A/20A POWER33, Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: Power33, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).