FDMC86260ET150 onsemi
Виробник: onsemiDescription: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 148.77 грн |
| 10+ | 118.92 грн |
| 100+ | 94.63 грн |
| 500+ | 75.14 грн |
| 1000+ | 63.75 грн |
Відгуки про товар
Написати відгук
Технічний опис FDMC86260ET150 onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V.
Інші пропозиції FDMC86260ET150 за ціною від 61.02 грн до 162.01 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMC86260ET150 | Виробник : onsemi / Fairchild |
MOSFET FET 150V 34.0 MOHM PQFN33 |
на замовлення 7534 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
FDMC86260ET150 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
товар відсутній |
|||||||||||||||||
| FDMC86260ET150 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33 Mounting: SMD Case: Power33 Kind of package: reel; tape Pulsed drain current: 116A Power dissipation: 65W Gate charge: 21nC Polarisation: unipolar Drain current: 18A Kind of channel: enhanced Drain-source voltage: 150V Type of transistor: N-MOSFET On-state resistance: 69mΩ Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
 |
FDMC86260ET150 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
товар відсутній |
|||||||||||||||||
|
|
FDMC86260ET150 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
товар відсутній |
|||||||||||||||||
|
|
FDMC86260ET150 | Виробник : onsemi |
Description: MOSFET N-CH 150V 5.4A/25A PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
товар відсутній |
|||||||||||||||||
| FDMC86260ET150 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33 Mounting: SMD Case: Power33 Kind of package: reel; tape Pulsed drain current: 116A Power dissipation: 65W Gate charge: 21nC Polarisation: unipolar Drain current: 18A Kind of channel: enhanced Drain-source voltage: 150V Type of transistor: N-MOSFET On-state resistance: 69mΩ Gate-source voltage: ±20V |
товар відсутній |