FDMD82100 onsemi / Fairchild
на замовлення 2601 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 338.17 грн |
| 10+ | 300.34 грн |
| 25+ | 247.19 грн |
| 100+ | 214.08 грн |
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Технічний опис FDMD82100 onsemi / Fairchild
Description: MOSFET 2N-CH 100V 7A 12POWER, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V, Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 12-Power3.3x5.
Інші пропозиції FDMD82100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FDMD82100 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 100V 7A 12-Pin Power 3.3 EP T/R |
товару немає в наявності |
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| FDMD82100 | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 25A; Idm: 80A; 2.1W; PQFN12 Case: PQFN12 Drain-source voltage: 100V Drain current: 25A On-state resistance: 35mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD кількість в упаковці: 1 шт |
товару немає в наявності |
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FDMD82100 | Виробник : onsemi |
Description: MOSFET 2N-CH 100V 7A 12POWER Packaging: Tape & Reel (TR) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-Power3.3x5 |
товару немає в наявності |
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FDMD82100 | Виробник : onsemi |
Description: MOSFET 2N-CH 100V 7A 12POWER Packaging: Cut Tape (CT) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-Power3.3x5 |
товару немає в наявності |
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| FDMD82100 | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 25A; Idm: 80A; 2.1W; PQFN12 Case: PQFN12 Drain-source voltage: 100V Drain current: 25A On-state resistance: 35mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD |
товару немає в наявності |