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FDMD82100

FDMD82100 onsemi / Fairchild

FDMD82100_D-1807346.pdf
Виробник: onsemi / Fairchild
MOSFET PT5 100/20V Dual Nch Power Trench MOSFET
на замовлення 2601 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна без ПДВ
2+317.33 грн
10+281.83 грн
25+231.95 грн
100+200.89 грн
Мінімальне замовлення: 2 шт
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Технічний опис FDMD82100 onsemi / Fairchild

Description: MOSFET 2N-CH 100V 7A 12POWER, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V, Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 12-Power3.3x5.

Інші пропозиції FDMD82100

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
FDMD82100 FDMD82100 onsemi fdmd82100-d.pdf Description: MOSFET 2N-CH 100V 7A 12POWER
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V
Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-Power3.3x5
товару немає в наявності
В кошику  од. на суму  грн.
FDMD82100 FDMD82100 onsemi fdmd82100-d.pdf Description: MOSFET 2N-CH 100V 7A 12POWER
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V
Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-Power3.3x5
товару немає в наявності
В кошику  од. на суму  грн.
FDMD82100 fdmd82100-d.pdf
FDMD82100
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7A 12POWER
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V
Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-Power3.3x5
товару немає в наявності
В кошику  од. на суму  грн.
FDMD82100 fdmd82100-d.pdf
FDMD82100
Виробник: onsemi
Description: MOSFET 2N-CH 100V 7A 12POWER
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 50V
Rds On (Max) @ Id, Vgs: 19mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-Power3.3x5
товару немає в наявності
В кошику  од. на суму  грн.