FDMD8240L onsemi / Fairchild
на замовлення 3500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.09 грн |
| 10+ | 155.07 грн |
| 100+ | 106.95 грн |
| 250+ | 98.97 грн |
| 500+ | 89.67 грн |
| 1000+ | 76.39 грн |
| 3000+ | 73.07 грн |
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Технічний опис FDMD8240L onsemi / Fairchild
Description: MOSFET 2N-CH 40V 23A, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 23A, Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 12-Power3.3x5, Part Status: Active.
Інші пропозиції FDMD8240L за ціною від 126.84 грн до 265.86 грн
| Фото | Назва | Виробник | Інформація |
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FDMD8240L | Виробник : onsemi |
 Description: MOSFET 2N-CH 40V 23APackaging: Cut Tape (CT) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-Power3.3x5 Part Status: Active |
на замовлення 6002 шт: термін постачання 21-31 дні (днів) |
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| FDMD8240L | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 62A; Idm: 464A; 42W; PQFN12 Case: PQFN12 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 62A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 3.95mΩ Pulsed drain current: 464A Power dissipation: 42W Gate charge: 56nC кількість в упаковці: 1 шт |
товар відсутній |
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FDMD8240L | Виробник : onsemi |
Description: MOSFET 2N-CH 40V 23A Packaging: Tape & Reel (TR) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-Power3.3x5 Part Status: Active |
товар відсутній |
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| FDMD8240L | Виробник : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 62A; Idm: 464A; 42W; PQFN12 Case: PQFN12 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 62A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 3.95mΩ Pulsed drain current: 464A Power dissipation: 42W Gate charge: 56nC |
товар відсутній |