| Кількість | Ціна |
|---|---|
| 2+ | 301.22 грн |
| 10+ | 267.54 грн |
| 100+ | 190.53 грн |
| 500+ | 162.23 грн |
| 1000+ | 136.69 грн |
| 3000+ | 129.09 грн |
| 6000+ | 128.40 грн |
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Технічний опис FDMD8680 onsemi / Fairchild
Description: MOSFET 2 N-CH 80V 66A 8-PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 39W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V, Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-Power 5x6, Part Status: Active.
Інші пропозиції FDMD8680 за ціною від 147.70 грн до 309.10 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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.jpg "FDMD8680") |
FDMD8680 | onsemi |
 Description: MOSFET 2 N-CH 80V 66A 8-PQFNGate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drain to Source Voltage (Vdss): 80V Power - Max: 39W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-Power 5x6 Vgs(th) (Max) @ Id: 4V @ 250µA |
на замовлення 2169 шт: термін постачання 21-31 дні (днів) |
|
| FDMD8680 |
|
Виробник: onsemi
Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 39W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power 5x6
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 80V
Power - Max: 39W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power 5x6
Vgs(th) (Max) @ Id: 4V @ 250µA
на замовлення 2169 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 309.10 грн |
| 10+ | 267.59 грн |
| 100+ | 219.22 грн |
| 500+ | 175.13 грн |
| 1000+ | 147.70 грн |